Abstract

ABSTRACTThis paper introduces a novel High‐speed Ultralow power Double‐Node Upsets (DNU) Tolerant Automotive Latch (HUDTAL) fabricated in the 55‐nm CMOS technology. Through the integration of Muller‐C‐Element (MCE), Node‐Hardened MCE, CLK‐Gating MCE (CG‐MCE), and Transmission Gate techniques, the proposed latch can fully resist DNU. Compared with similar types of latches through simulation, the proposed latch has higher critical charges and does not generate any TFs at the output that may affect the next stage circuit, saving 4.89% area power delay product on average. Additionally, it exhibits lower sensitivity to process voltage temperature variations, enabling stable operation in harsh environmental conditions.

Full Text

Published Version

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.