Abstract
A scanning electron microscope (SEM) with an immersion-type objective lens has been developed. The objective lens generates a strong axial magnetic field of about 0.17 T at a wafer surface and has a very short focal length of about 2.5 mm. The SEM realizes an image resolution of 30 Å at 0.7 kV accelerating voltage. The capability to observe the bottom of a trench with a 5.3 µm depth and 0.55 µm width and that of a hole with a 0.46 µm diameter and 1.6 µm depth has been demonstrated at a low accelerating voltage of 0.5∼1.5 kV. A good measurement reproduceability of 5 nm/3σ (σ: standard deviation) has been achieved in the measurement of the 0.55 µm SiO2 line pattern on the bottom of a trench of 0.55 µm width and 5.3 µm depth. The SEM has been applied to the observation of 64MDRAM cell patterns with a 0.4 µm design rule.
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