Abstract

A new charge pump (CP) circuit is proposed in this paper. This circuit utilizes a gain boosting technique to achieve a high output impedance over a wide output voltage range. By using a simple gain boosting circuit, good current matching characteristics can be achieved with less than 0.25μΑ, less than 0.5%, difference of the UP/DN current over CP output voltage range. A high output voltage swing is obtained by employing the bulk driven technique. The proposed CP circuit is designed and simulated under 1.8V power supply in 0.18μm CMOS technology in HSPICE.

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