Abstract
This work reports a novel silicon on insulator (SOI)-based high quality factor (Q factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which have a high resonance frequency of 51.3 MHz and high Q factors over 8000 in air and over 30,000 in vacuum. The high Q values, nano-scale air gaps, and large electrode area greatly improve the capacitive transduction efficiency, which decreases the bias voltage for the high-stiffness bulk mode resonators with high Q. The resonator showed the nonlinear behavior. The proposed resonator can be applied to construct a wireless communication system with low power consumption and integrated circuit (IC) integration.
Highlights
Nowadays, wireless communication systems are developing towards higher frequency, narrow channel, multiband and multimode [1,2], which requires high performance, high integration, and low power consumption resonators as time reference devices [3,4]
RTheseumltesaasnudreDdisrecsuosnsiaonntsfrequency is around 51.3 MHz, which corresponds l with the calculated vTahlueefrferoqmuenEcqyuraetsiopFnoign(u4sre)e.sT6o.hfMethereaessfuoarbneramitceoanrttewsdeatLusapdmfroiévr-methnoeidLneatmoreévs-iombnroaadtteoiorrneospoanet araatotliron.wg in air and in vacuum s voltage of 3 V, aarnedshaowhinghin sFiiggnuarle-t7o.-nTohiesemreaatsiuoreodverers2o5nadnBt frweqasueonbctyaiinseadro. uTnhde 5L1a.3mMé-Hmzo, dwehich corresponds well onator exhibits a Qw3.ivRthaelsuthueeltoscfaa8lnc1ud5l0Datiiensdcauvirsasaliunoednfs3ro4m,20E0qiunavtiaocnuu(4m)
To better understand the effect of air damping on the Lamé-mode resonator, a finite simulation based on squ(ae)ezed film damping is conducted [34]
Summary
Wireless communication systems are developing towards higher frequency, narrow channel, multiband and multimode [1,2], which requires high performance, high integration, and low power consumption resonators as time reference devices [3,4]. A typical Lamé-mode resonator with an extremely high Q factor of 7.5 × 105 at a resonance frequency of 12.9 MHz requires a driving voltage of 100 V [10]. A Lamé-mode resonator with thin air gap of 50 nm was excited with a low voltage of 2.5 V into vibration at 17.6 MHz, but its Q factor was only 8000 in vacuum [19]. A capacitively actuated and piezoresistively detected Lamé-mode resonator can vibrate at 2.2 MHz with low bias voltage of 3 V, yet its Q factor is 6771 at atmosphere [20]. Reducing the bias voltage while maintaining high Q factor is essential for achieving an IC-integrable high-performance MEMS resonator
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