Abstract
Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity. These advantages enable the SiC MOSFET to operate at higher switching frequencies, while, as the switching frequency increases, the turn-on loss accounts for most of the loss. This characteristic severely limits the applications of the SiC MOSFET at higher switching frequencies. Accordingly, an SRD-type drive circuit for a SiC MOSFET is proposed in this paper. The proposed SRD-type drive circuit can suppress the turn-on oscillation of a non-Kelvin packaged SiC MOSFET to ensure that the SiC MOSFET can work at a faster turn-on speed with a lower turn-on loss. In this paper, the basic principle of the proposed SRD-type drive circuit is analyzed, and a double pulse platform is established. For the purpose of proof-testing the performance of the presented SRD-type drive circuit, comparisons and experimental verifications between the traditional gate driver and the proposed SRD-type drive circuit were conducted. Our experimental results finally demonstrate the feasibility and effectiveness of the proposed SRD-type drive circuit.
Highlights
The silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) has many outstanding features, for example, fast carrier saturation drift velocity, high breakdown voltage, large bandgap, good thermal conductivity, etc. [1,2,3,4,5,6], which can improve the operational performance of power converters
This paper proposes an SRD-type drive circuit that can suppress the effect of the analysis, this paper proposes an SRD‐type drive circuit that can suppress the effect of the common source inductor on the SiC MOSFET turn-on oscillation
The SRD‐type drive circuit can ensure that the SiC MOSFET avoids the reverse charging process of the drive circuit can ensure that the SiC MOSFET avoids the reverse charging process of the drive circuit at a high turn-on speed, thereby suppressing the turn-on oscillation of non-Kelvin circuit at a high turn‐on speed, thereby suppressing the turn‐on oscillation of non‐Kelvin packaged SiC MOSFET
Summary
The silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) has many outstanding features, for example, fast carrier saturation drift velocity, high breakdown voltage, large bandgap, good thermal conductivity, etc. [1,2,3,4,5,6], which can improve the operational performance of power converters. This method is simple to implement and has a significant effect of reducing turn-on loss. This method does cause serious oscillation of the gate-source voltage. This paper proposes a resistor and diode in series- (SRD-) type drive circuit which can suppress the turn-on oscillation of a non-Kelvin packaged SiC MOSFET, based on the turn-on oscillation mechanism of the non-Kelvin packaged SiC MOSFET during the turn-on process. This paper proposes a resistor and diode in series‐ (SRD‐) type drive circuit which can suppress the turn‐on oscillation of a non‐Kelvin packaged SiC MOSFET, based on the of 11 turn‐on oscillation mechanism of the non‐Kelvin packaged SiC MOSFET during the2turn‐.
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