Abstract
In this work, we present a novel multi-level non-volatile memory (NVM) device where ferroelectric (FE) nanopillars are embedded in a dielectric (DE) medium. Using our in-house 3D phase field simulator developed to treat the FE–DE composite system stably, we demonstrate that n FE nanopillars can generate more than 2n states, enabling high storage capacity. The multistates of the pillar array device are attributed to the depolarization field modulation with the pillar height and the multi-domain topological states of nanoscale FE structures.
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