A novel fast technique for detecting voiding damage in IC interconnects

Abstract

A novel technique has been developed, which is sensitive to the degree of voiding damage induced in a wide-line interconnect test structure (Testing of conductors, Preliminary Irish patent application, August 26th, 1998). The technique is based on the measurement of the scattering parameters (S-parameters) of a simple, metal-line test structure over a range of high frequencies. The transmission-line parameter, G (leakage conductance), which is calculated from the S-parameter measurements, is shown to be sensitive to distribute voiding, especially in wider lines. This is significant for the following reasons: (1) the measurement is fast — a few seconds per test structure, (2) it can be performed at wafer level, (3) it does not rely on overstressing of the metallization and (4) it is sensitive to the amount of voiding damage present in wide interconnect lines. Potential applications for this technique are: (a) an in-line statistical reliability control (SRC) test for the detection of stress voids induced during processing, and (b) an in-line SRC test for electromigration when preceded by a suitable current pre-stress step.