Abstract
In this study, a thick film Cu-Ni alloy was fabricated by using a novel technique which combing thick film process and galvanic chemical replacement. First, a thick film Al electrode was screen printed and sintered at 600° C on the Al2O3 substrate served as a reactant. Sequentially, the Al electrode on Al2O3 substrate was immersed into a CuSO4 solution at 40° C for 15-30minutes to carry out the first galvanic replacement reactions of partial Al electrode into Cu° After which it was immersed into an NiSO4 solution 80°C for 15 minutes to carry out the second galvanic replacement reactions of remaining Al electrode into Ni to form Cu-Ni layers on the Al2O3 substrate. To make a thick film Cu-Ni alloy, the Cu-Ni layers on Al2O3 substrate was annealed at high temperature for inter-diffusion of Cu and Ni. The results of this study show that when a thick film Al electrode on an Al2O3 substrate is immersed into a CuSO4(aq) solution at 40° C for 15 minutes and sequentially immersed in an NiSO4(aq) solution at 80°C for 15 minutes. Then, after further annealing at 800°C for 30 minutes in a reducing atmosphere, the Cu and Ni composition ratio in the thick film Cu-Ni alloy is approximately 1:1, reflecting Cu-Ni alloy resistor with a very promising TCR performance (115ppm/°C).
Accepted Version
Published Version
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