Abstract
A new experimental technique, based on gate-to-drain capacitance C/sub gd//sup s/ and charge pumping (CP) current, is proposed for the lateral profiting of oxide and interface state charges in the LDD region of the n-MOSFETs. The device is injected with hot holes, which are subsequently removed by a low-level channel hot-electron stress. The degree of neutralization is monitored by C/sub gd//sup s/ until complete annihilation of trapped holes is realized. This allows the effects of oxide and interface state charges on CP characteristics to be clearly distinguished, and the spatial profiles of the two charges to be separately determined.
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