A novel cap-annealing technique using a WN/sub x/ film as a capsulant in the refractory gate self-aligned GaAs MESFET fabrication process

Abstract

A novel cap-annealing technique for n/sup +/ implanted layers in GaAs MESFET's was investigated from the viewpoint of thermal stress relaxation. In this technique, the same metal as the gate's-tungsten nitride (WN/sub x/) was used for an underlayer of a double-layer annealing cap. FET parameters V/sub th/, K-value, and N/sub g/ showed behavior in the short-channel region just as if the short-channel effects were suppressed. >