Abstract
Temperature and process variations have become key issues in design of integrated circuits using deep submicron technologies.In the RF front-end circuitry, these characteristics must be compensated to maintain acceptable performance across all process corners and throughout the temperature variations. This article proposes a new bias circuit technique to compensate the variations by adding a single NMOS to the normally bias circuit. A 2.4GHz and 5.2GHz LNAs with the proposed bias circuit have the power gain variation (S21) of only 0.3 dB for the −40 to 85°C temperature range in a 65nm RF CMOS process. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2694–2697, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27170
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