A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs

G.R Chaji,D Striakhilev,A Nathan

doi:10.1109/led.2005.855421

A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs

G.R Chaji, D Striakhilev + Show 1 more

https://doi.org/10.1109/led.2005.855421

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Journal: IEEE Electron Device Letters	Publication Date: Oct 1, 2005
Citations: 184

Affiliation: University of Waterloo

#Thin Film Transistors #Active Matrix Organic Light-emitting Diode + Show 8 more

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Abstract

This letter presents a novel pixel circuit for hydrogenated amorphous silicon (a-Si:H) active matrix organic light-emitting diode displays employing the short-term stress stability characteristics of a-Si:H thin film transistors (TFTs). The pixel circuit uses a programming TFT that is under stress during the programming cycle and unstressed during the drive cycle. The threshold voltage shift (V/sub T/-shift) of the TFT under these conditions is negligible. The programming TFT in turn regulates the current of the drive TFT, and the pixel current therefore becomes independent of the threshold voltage of the drive TFT.

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