Abstract
A compact model approach to enhance the accuracy and facilitate the parameter extraction of trapping models is presented. The proposed model replaces the conventional superposition of discrete trapping time constants by a Gaussian distribution of a particular range of time constants. This approach reflects the physically non-constant energy levels of the trap distribution of surface, interface, and bulk traps. Also, we propose a new equivalent circuit that takes the time-dependent charging and discharging of traps into account. We show that our model reduces the model complexity by 52%. The model is verified against dynamic ON-state resistance ( R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS,ON</sub> ) measurements of a commercial 100-V gallium-nitride (GaN) power transistor in soft-switching operation.
Published Version
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