Abstract
AbstractThe aim of this work is the purification of MG‐silicon powder using a method combining acid leaching and thermal annealing. It describes experiment carried out by using a tungsten lamps furnace (rapid thermal processing, RTP) to purify silicon powder under controlled atmosphere. This process enables to segregate the impurities to the surface of silicon powder where they can be extracted by partial dissolution in acids. Obtained silicon was investigated by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP‐AES) method. Major impurities present in silicon powder were Al, K, Fe, Na, Ca, Mg and B. After purification the concentration of major impurities significantly decreased. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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