Abstract

AbstractThe matrix resin as the backbone material plays a crucial role in the performance of a photoresist. In this study, a novel amide–imide copolymer, poly[N‐(p‐hydroxyphenyl) methacrylamide‐co‐N‐phenylmaleimide], was successfully prepared. This copolymer was very close to 1 : 1 (molar ratio) in composition and was predominately alternating in structure during the copolymerization with an equimolar monomer feed ratio. It had good solubility in organic solvents and good film‐forming characteristic, and it was also soluble in a basic aqueous solution. Differential scanning calorimetry and thermogravimetric analyses showed that it had a glass‐transition temperature at about 290°C and excellent thermostability. Photolithographic experiments indicated that the UV photoresist formulated with this copolymer as a matrix resin, diazonaphthoquinone sulfonate as a photosensitizer, a solvent, and other additives had a resolution of about 1 μm, a contrast of 2.83, and a sensitivity of 28 mJ/cm2. This photoresist had good plasma etching resistance and could endure 260°C for 30 min without thermal deformation of the lithographic images. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2010

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