A novel accumulation mode complementary GAAC FinFETs inverter with hybrid orientation SOI substrate

Abstract

We proposed a novel complementary GAAC FinFETs inverter device structure operating in accumulation mode with hybrid orientation SOI substrate and shared with one gate. Compared with other reported CMOS devices, both of the NMOS and PMOS devices with different channel orientation have buried oxide layer to isolate it from the substrate. The hole mobility is more than doubled on (110) silicon substrate with current flow direction along 110 compared with conventional (100) substrates. The electron mobility is still the highest on (100) substrates. The device structure is simple, tight-outs and the density of the ICs can be doubled. We also reported our analytical model and TCAD results on gate-all-around cylindrical (GAAC) FinFET with operation based on channel accumulation. The symmetrical nature of field in channel leads to improved electrical characteristics, e.g. reduced leakage current and negligible corner effect. The Ion/Ioff ratio of the device can be larger than 106, as key parameter for device operation. The GAAC FinFET operated in accumulation mode appears a good potential candidate for device scaled down to sub-10 nm.