Abstract
In this paper, a novel silicon carbide (SiC) Super Junction (SJ) UMOSFET with Heterojunction Diode (HJD) is proposed and investigated by numerical simulation. The proposed structure features integrated HJD that substantially improves body diode characteristics while guarantees that no degradation of static characteristics of device. In this structure, the p+ shielding region between the p-poly region and p-pillar protect not only bottom gate oxide but also p-poly region from large electric field concentration. Moreover, proposed structure reduces peak reverse recovery current (I RR ) and reverse recovery charge (Q RR ) by factor of 2.58 and 4.94, respectively when compared with those of the conventional SJ UMOSFET
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