Abstract
A novel 1.2-kV-rated 4H-SiC buffered-gate MOSFET (BG-MOSFET) structure is proposed and experimentally demonstrated to have superior high frequency figures-of-merit (HF-FOMs) for the first time. From the measured data on devices fabricated in a 6-in foundry, the BG-MOSFET is demonstrated to have $4.0\times $ and $2.6\times $ smaller HF-FOM [ ${R}_{ {\scriptscriptstyle{\text {ON}}}}\times {Q}_{\text {gd}}$ ], and $3.6\times $ and $2.1\times $ smaller HF-FOM [ ${R}_{ {\scriptscriptstyle{\text {ON}}}}\times {C}_{\text {gd}}$ ], when compared with the conventional MOSFET and split-gate MOSFET, respectively.
Accepted Version
Published Version
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