A note on the Hall mobility and carrier concentration in pyrite thin films

Abstract

Abstract This note presents results on Hall effect characteristics (mobility and density of majority charge carriers) of undoped p-type and n-doped pyrite thin films. Carrier mobilities between 200 and 0.07 cm 2 / V s have been measured in undoped p-type films. Doped n-type films present values which vary from 200 to 0.1 cm 2 / V s . The corresponding carrier densities change from 2×1018 to 10 22 cm −3 in p-type films and from 6×1017 to 10 21 cm −3 in n-type films. These results reinforce the physical basis and conclusions of the modelling of pyrite solar cells accomplished by Altermatt et al. (Sol. Energy Mater. Sol. Cells 71 (2002) 181).