Abstract
A non-GCA (Gradual Channel Approximation) model continuous into the velocity saturation region is developed for ground-plane bulk MOSFETs. The Ids-Vds characteristics generated by both the n = 1 and the n = 2 models are consistent with 2-D simulations. By incorporating source and drain series resistance into the model, it is shown that the model can reproduce the Ids-Vds data of 20 nm bulk MOSFETs published in the literature.
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