Abstract
Continuous models are developed that go beyond the gradual channel approximation and extend MOSFET ${I}$ – ${V}$ characteristics into the velocity saturation region with finite output conductance. Both the ${n} = {1}$ and ${n} = {2}$ models have been employed. It is shown that the standard relation of channel length modulation for constant mobility must be modified for velocity saturation because the drain current is not simply inversely proportional to the channel length. Regional approximations are applied to derive the explicit expressions for the output conductance in the velocity saturation region in terms of basic device parameters.
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