Abstract
Abstract A new drain-current model applicable to submicrometer SOI MOSFETs is presented. The analysis is carried out for a non-uniform doping distribution in silicon film and it takes into account the field dependence of mobility of electrons in the conducting channel and the possible fringing field effects near the drain and source ends. The present two-dimensional (2-D) model considers the short-channel effect on the depletion layer charge and hence on the static characteristics of the device. The results so obtained are verified with experimental data. The analysis is extended to find an expression for transconductance in terms of terminal voltages and device parameters. The cut-off frequency of the present model lies in the microwave region; therefore, to the first-order approximation, the model could be suitable for very high frequency applications.
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