Abstract
This paper proposes a new wafer thinning method in bonding silicon-on-insulator (SOI) technology. With this new method, thermal oxidation is performed on thin boron-doped Si films after highly selective back-etching to reduce the boron concentration in the film. The boron concentration in the silicon layer on oxide can be decreased more than 2 figures under proper thermal oxidation conditions. A 90-nm-thick silicon layer with 4×1017/cm3 boron concentration was formed on an insulator by this method. Transmission electron microscope (TEM) observation shows that the silicon layer has a highly crystalline quality. It is also found that the reflow of borophosphosilicate glass (BPSG) can effectively fill in the small surface gaps during wafer bonding.
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