Abstract
Abstract An improved technique has been found for the vacuum deposition of epitaxial films of Pb1−xSnxTe on cleaved KC1 substrates. In order to nucleate a crystalline film which adheres well to the substrate, the substrate temperature is initially raised to only 280°C. After a one-micron film has grown, the substrate temperature is then raised to 400°C and maintained there for all subsequent film growth. This increase in substrate temperature is needed to achieve the highest quality optical surfaces. Results on both as-grown and annealed films are presented. One result of our annealing program has been the achievement of the lowest reported carrier concentration in films with Sn fractions greater than 0.3.
Published Version
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