Abstract
AbstractA new system for hydride vapor phase epitaxy (HVPE) of thick InN layers using Cl2 was investigated. Thermodynamic analysis was performed for the reactions at the source and the growth zones. It was found that InCl3 can be generated preferentially at the second source zone by adding Cl2 to InCl from the first source zone. The analysis for the growth zone showed that a significantly large driving force for InN deposition is expected. It was shown that the growth of thick InN layers is possible by employing the new HVPE system. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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