A new structure of C 60/AlN high performance field effect transistor

Abstract

A new structure for high performance C 60/AlN field effect transistor (FET) has been proposed to form an excellent interface between the C 60 and the insulator layers. In this paper, we have first successfully achieved to fabricate the new C 60/AlN FET structure and have investigated on the drain current versus source–drain voltage ( I D– V SD) characteristics of the new C 60 FET. It has been revealed by the C 60 growth experiments that the grain size in the solid C 60 layers grown on the AlN layers was larger than that on the conventional SiO 2 layers. A typical I D– V SD curve of the proposed FET consists of the hopping, the linear and the saturation regions as similar to that of the conventional C 60/SiO 2 FET. The electron mobility estimated from the analysis on the linear and/or the saturation regions of the I D– V SD curves increases with the grain size. On the other hand, in the hopping region below the threshold V SD, the activation energy for the hopping of the carrier decreases with the grain size. The experimental results strongly indicate that the proposed new C 60/AlN FET structure has a large potential to realize the high performance C 60 FETs.