Abstract
Presently TCAD simulation of single photon avalanche diode (SPAD) cannot directly obtain the important performances of SPAD. In this paper, we propose a new simulation method combining TCAD simulation with the numerical computation, which can exactly predict the statistical performances of SPAD such as Quantum Detection Efficiency (QDE), Dark Count Rate (DCR) and Afterpulsing Probability (AP). This new simulation method is useful in optimizing SPAD design with higher QDE and lower DCR.
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