Abstract

A new set of semiconductor equations is proposed here which will be suitable for the numerical study of the carrier transport effects in submicron devices. With simplified models and comprehensive numerical techniques, the relative importance (on the device behavior) of several physical effects, such as velocity overshoot, intracollisional field effect, avalanche breakdown, carrier generation and temperature effect can be determined. The program that is capable of solving this set of equations will become an indispensible CAD tool if the current trend of the decreasing of the device dimensions continues.

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