Abstract

The theory and design aspects of n-way in-phase power divider employing Goldfarb recombinant topology are described. The merits of this divider over conventional ones are also presented here. A microstrip version of five output port power divider is designed and developed with 1.7 mm Bakelite substrate to operate in S-band. The measured values of input VSWR, insertion loss, isolation, return loss and phase difference between output ports at different frequencies in S-band for the fabricated power divider are presented and discussed.

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