Abstract
We report a new quantum effect in metal-oxide-semiconductor field-effect transistor (MOSFET), namely that the two-dimensional (2-D) inversion charge falls substantially short of the classically predicted linear increase with gate voltage (VG) in strong inversion. This effect is to be effectively quantified via the threshold voltage (VTH) increasing with VG in the classical current–voltage (I–V) model and is called herein the threshold voltage creep (VTH-creep). In 0.18 µm MOSFET, for example, VTH-creep amounts to 58% of the VTH at the device turn-on point, when VG is swept from 0.5 to 2 V. Additionally, the VTH-creep significantly affects the extraction of effective mobility (µeff) from the I–V data. VTH-creep is shown a key to the accurate I–V modeling and constitutes one of the most clearly observed quantum phenomena in MOSFET.
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