Abstract
We have fabricated a poly-Si TFT using a novel oxidation method, which improves the surface roughness at the interface between the poly-Si layer and the gate oxide layer. The surface roughness at the interface is observed by transmission electron microscopy (TEM) and is also evaluated by atomic force microscopy (AFM) after the oxide layer is removed using buffered HF acid.Compared with the poly-Si TFTs fabricated by the conventional oxidation method, the proposed poly-Si TFT exhibits the remarkable enhancement of the electrical parameters, such as the subthreshold swing and the threshold voltage. It is observed that the proposed poly-Si TFT has a higher dielectric strength and the device characteristics are not degraded significantly after an electrical stress. The improvement of the surface roughness at oxide/poly-Si interface is found to be critical to enhance the device performance.
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