Abstract
A multiharmonic loading method for nonlinear microwave and millimeter-wave transistor characterization using six-port techniques is presented. The system allows independent load tuning of an excitation signal and its harmonics. Load-pull measurements on a MESFET which have been performed at the fundamental frequency f/sub 0/ and at the second (2f/sub 0/) and third (3f/sub 0/) harmonics are discussed. The results highlight the importance of such measurement in designing and modeling nonlinear devices and circuits. The experimental results are found to be directly applicable for optimizing efficiency and output power in high-power MESFET amplifiers and MESFET frequency multipliers.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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