Abstract
An original measurement system for nonlinear microwave power transistor characterization, using six-port reflectometers, is presented. It allows independent active tuning of the output impedances at f/sub 0/ and 2f/sub 0/ (multiharmonic load-pull) and variation of the source impedance at the input port at f/sub 0/ (source-pull). Experimental results are shown for a commercial GaAs MESFET power transistor.
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