Abstract
Understanding the recombination nature in a polar InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) or similar device is critical for their further performance enhancements. This paper reports a new theoretical model for investigating the recombination dynamics in MQW LEDs, which more comprehensively takes both localized exciton recombination (LER) and free carrier recombination (FCR) into account. The obtained rates for LER, FCR and nonradiative recombination show a clear picture of recombination paths in a commercial blue MQW LED wafer. They can be also used to calculate the internal quantum efficiency without involving any extra measurements or prerequisites. This model may provide a universal solution to express the complicated recombination dynamics in various kinds of MQW LEDs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
