Abstract
The potentials of a new lattice-matched material combination, GaAs~Ga0.52In0.48P, is explored using a computer simulation method for application as an IMPact ionization Avalanche Transit Time diode at mm-wave frequencies. It is observed that by suitably adjusting the ternary layer width in the drift region of the diode not only is the power output enhanced from 0.38W to 0.50W but also the noise measure reduces from 26 dB to 21 dB.
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