Abstract
ABSTRACTA new direct extraction method for the determination of the parasitic capacitances of HEMTs is presented in this article. This method is based on a physically meaningful depletion‐layer model and the theoretical analysis of the two‐port network for the pinch‐off cold FETs. The main advantage of this approach is that parasitic capacitance Cpg, Cpd, and Cpdg can be extracted under different pinch‐off conditions. Good agreement is obtained between modeled and measured results for 2 × 20 μm gate width HEMT (number of gate fingers × unit gate width). © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:3005–3007, 2013
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
