Abstract
Plasma Enhanced Chemical Transport Deposition (PECTD) — a new method of preparation of a-GaAs film is reported. The main feature of this method is the use of plasma polymerization at the deposition region in order to enhance the rate of the composition of GaAs moleculae. Systematic studies enhance the rate of the composition of GaAs moleculae. Systematic studies on physical properties of a-GaAs film have been carried out and in particular we first report the value of the electron drift mobility of the a-GaAs films is on the order of 10 −2 −10 −3cm 2/V·S by the traveling wave method.
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