Abstract
A new method is presented that is capable of resolving the parameters in a double-exponential model with which the electrical characteristics of a crystalline-silicon solar cell are analysed. This method gives not only open-circuit voltage, short-circuit current, fill factor and efficiency, but also diode saturation currents, light-generated current, series resistance and shunt resistance, all from one measurement under AM 1 illimination. The experimental set-up used for I-V measurement and automated data handling is described. A fast computer fit procedure is introduced which resolves all parameters from one measurement. The errors in the parameter values obtained are studied. A comparison of these values for a number of I-V measurements of solar cells with different internal physical properties is given, in order to illustrate the utility of the method for unravelling various electrical processes in a solar cell.
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