Abstract
This paper introduces a new method for simulation of quantum semiconductor devices. These devices are open systems and we have changed the conventional form of the boundary conditions of the Schrödinger equation in these devices into two differential equations and introduced a numerical method for solving these equations in a full matrix form. We have applied our method to a resonant tunnelling diode as an illustrative example and found its I/V curves. We also explain several properties of the proposed method, including varying effective mass simulation, complex eigenvalue determination and phase time and dwell time calculation.
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