Abstract
A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMTs) based on a 50-/spl Omega/ noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 26 GHz is presented and a comparison with a tuner-based method is given. The scaling rules for noise parameters have also been determined. Good agreement is obtained between simulated and measured results for 2/spl times/20 /spl mu/m, 2/spl times/40 /spl mu/m, and 2/spl times/60 /spl mu/m gatewidth (number of gate fingers /spl times/ unit gatewidth) 0.25-/spl mu/m double-heterojunction /spl delta/-doped pHEMTs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
