Abstract
A new method to reduce the dislocation density in a GaN film grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) is reported. In this new method, SiH 4 and NH 3 gases are simultaneously introduced at a low temperature with a certain time before the growth of an initial low-temperature GaN buffer layer. By transmission electron microscope (TEM), the density of threading dislocation originating from the interface between low-temperature buffer layer and high-temperature GaN layer decreases to be almost invisible from 7×10 8/cm 2 in the conventional MOCVD growth technology for GaN film. Atomic force microscopy indicates that introducing SiH 4 and NH 3 gases at a low temperature changes surface morphology, which probably enhances the lateral growth and then decreases the dislocation density. This method could be used for fabrication of long-lifetime GaN-based laser instead of epitaxial lateral overgrowth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.