A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg= Vd

Abstract

Hot-carrier degradation of n-MOSFETs at high gate voltages ( V g= V d) is examined. A new lifetime prediction method is developed based on the universal power law between the degradation of saturated drain current (d I dsat) and the product of the injected charge fluence times the gate current, which is independent of gate or drain voltages. This method is applied to 4 and 5 nm n-MOSFETs and lifetimes are estimated under their operation conditions. It is applicable to n-MOSFETs with ultrathin gate oxides.