Abstract
A new lateral trench electrode insulated gate bipolar transistor (LTEIGBT) with a p+ diverter was proposed and fabricated to improve the electrical characteristics of the conventional LTIGBT. The p+ diverter was placed between anode and cathode electrodes. Because the p+ diverter region of the proposed device was an enclosed trench oxide layer, the electric field centered on the trench oxide layer and the punch-through breakdown of the LTEIGBT with a p+ diverter was occurred at a high. Therefore, the p+ diverter of the proposed LTIGBT was not related to the breakdown voltage in contrast to that of the conventional LTIGBT. As a result of device simulation, the electrical characteristics of the proposed LTEIGBT including latching current density, breakdown voltage and switching speed were superior to those of the conventional LIGBTs. After simulation, we fabricated and analyzed the proposed LTEIGBT with a p+ diverter. The maximum currents of the proposed and conventional LTIGBTs were 90 mA and 70 mA, respectively. Therefore, the proposed LTEIGBT with a p+ diverter is an effective device for a smart power IC.
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