Abstract

A large-signal model for RF power MOSFET has been obtained using a new characterization and extraction technique. This technique is based on pulsed I-V characteristics and pulsed S-parameters measurements, to take into account the thermal state of the device. A table-based model is used to represent the I-V drain current source. The complete large-signal model is implanted in an harmonic-balance commercial simulator and its accuracy is evidenced by a comparison with active load-pull measurements at L band. >

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