Abstract
In order to use SiC devices in CAD nonlinear circuits, a nonlinear model of 4H-SiC MESFET has been obtained using a technique based on pulsed I(V) characteristics and pulsed S-parameter measurements. The nonlinear I-V drain-source current was represented using a table-based model which was implemented in a harmonic balance simulator. Its accuracy is shown by a comparison with active load-pull measurements.
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