Abstract
The current paper presents a new inverter-based charge pump circuit with high conversion ratio and high power efficiency. The proposed charge pump, which consists of a PMOS pass transistor, inverter-based switching transistors, and capacitors, can improve output voltage and conversion ratio of the circuit. The proposed charge pump was fabricated with TSMC 0.35μm 2P4M CMOS technology. The chip area without pads is only 0.87mm×0.65mm. The measured results show that the output voltage of the four-stage charge pump circuit with 1.8V power supply voltage (VDD=1.8V) can be pumped up to 8.2V. The proposed charge pump circuit achieves efficiency of 60% at 80μA.
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