Abstract
A new procedure is presented to separate and extract source-and-drain series resistance and mobility degradation factor parameters in MOSFET compact models. It also allows us to extract the device's channel conductance. The procedure is not based on fitting, but on directly calculating the three parameters by solving a system of three simultaneous equations. The equations represent the measured source-to-drain output resistance, obtained from the output characteristics, and its first and second integrals with respect to gate voltage. This method may be applied to a single device, measured in strong inversion as a function of gate voltage, at a small drain bias.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
