Abstract
A method of preparing high back voltage silicon by bombarding the surface with oxygen has been devised and a new type of point contact diode prepared. The diode is characterized by: (1) very low saturation currents of the order of 1 microampere, (2) high inverse operating voltages (70-200v), (3) very low barrier capacitance (<0.3μ f) and rapid recovery times, and (4) operation at elevated temperatures up to 200 degrees C.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
