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Abstract
A new guard ring is studied to improve radiation tolerance of single-photon avalanche diodes (SPAD) designed in 180 nm high voltage Complementary Metal-Oxide-Semiconductor (CMOS) technology. The radiation tolerance enhancement is obtained due to the reduction of the electric field inside Shallow Trench Isolation (STI), which reduces radiation-induced positive oxide charge density inside the STI by almost one order of magnitude. TCAD simulations show that, after 1 Mrad (SiO2) of X-ray radiation with a cathode voltage of 24.4 V, the increase in dark count rate at room temperature compared to pre-irradiation is 1438 counts per second (cps) and 311 cps for the conventional structure and new structure respectively, which shows a 78.3 % decrease in DCR increment for the new structure as compared to the conventional one. Moreover, the fill factor and photon detection probability of the new structure decreases by 0.3 % and 6 % compared to the conventional structure, which is negligible.
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