Abstract
In this paper, a new open source floating-gate MOSFET (FGMOSFET) device-level micro-model to facilitate accurate analog circuit design is presented. The floating gate is charged by the Fowler–Nordheim tunneling effect. The equations representing the new device model were explored and verified on MATLAB. Subsequently, Verilog-A script was employed to combine the equations and build the complete device model. The new FGMOSFET circuit model was plugged-in as a pop-up menu component in a standard 130 nm CMOS technology design library. Thus, it can be instanced directly on a schematic editor palette for analog circuit simulation and design in a similar fashion as the standard MOSFET devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
